Microsemi Corp. Bipolar Transistors - BJT Jantx2N2907A/TR

PNP silicon small signal transistor for general-purpose amplification and switching, packaged in a TO-18 metal case with dimensions of 4.52 to 4.95 mm diameter, 5.31 to 5.84 mm height, and 12.70 to 19.05 mm lead length. The device has a collector-emitter voltage rating of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. Operating and storage junction temperature ranges from -65°C to +200°C. Qualified to MIL-PRF-19500/291. Forward current transfer ratio ranges from 75 to 450 depending on collector current, with collector-emitter saturation voltage as low as 0.4 V at 150 mA collector and 15 mA base current. Base-emitter saturation voltage is 0.6 to 1.3 V under the same conditions.