Microsemi Corp. Bipolar Transistors - BJT JANTX2N2906AUB

The JANTX2N2906AUB is a PNP small signal silicon transistor in a surface-mount UB package, qualified to JANTX level per MIL-PRF-19500/291. It has a collector-emitter voltage rating of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. Operating and storage junction temperatures range from -65°C to +200°C. The device features a forward current transfer ratio (hFE) of 40 to 120 at 150 mA collector current and 10 V collector-emitter voltage. Collector-emitter saturation voltage is 0.4 V at 150 mA collector and 15 mA base current. The package has three leads with emitter as lead 1, base as lead 2, and collector as lead 3. Input capacitance is 30 pF and output capacitance is 8.0 pF under specified conditions. Switching times are 45 μs turn-on and 300 μs turn-off. The collector is internally connected to the case.