Microsemi Corp. Bipolar Transistors - BJT Jantx2N2906AUA

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Bipolar Transistors - BJT BJTs
Description
Bipolar Transistors - BJT BJTs
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PNP silicon small signal transistor in TO-18 package with a collector-emitter voltage rating of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. The device meets MIL-PRF-19500/291 qualifications and operates over a junction temperature range of -65 to +200°C.

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PNP silicon small signal transistor in TO-18 package with a collector-emitter voltage rating of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. The device meets MIL-PRF-19500/291 qualifications and operates over a junction temperature range of -65 to +200°C.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
Jantx2N2906AUA
Bipolar Transistors - BJT Jantx2N2906AUA
Bipolar Transistors - BJT BJTs

Bipolar Transistors - BJT BJTs

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number Jantx2N2906AUA
Product Name Bipolar Transistors - BJT
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