Microsemi Corp. Bipolar Transistors - BJT JANTX2N2906AL

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Bipolar Transistors - BJT BJTs
Description
Bipolar Transistors - BJT BJTs
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The JANTX2N2906AL is a PNP silicon small signal transistor qualified to MIL-PRF-19500/291, housed in a TO-18 (TO-206AA) package with a height of 0.230 inch and a lead spacing of 0.250 inch. It has a collector-emitter voltage rating of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. The operating and storage junction temperature range is -65 to +200°C. The device exhibits a forward current transfer ratio (hFE) of 40 to 175 at 1.0 mA collector current and 10 V collector-emitter voltage, with a collector-emitter saturation voltage of 0.4 V at 150 mA collector current and 15 mA base current. It meets the MIL-PRF-19500/291 military specification for high reliability applications.

Datasheet Summary
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The JANTX2N2906AL is a PNP silicon small signal transistor qualified to MIL-PRF-19500/291, housed in a TO-18 (TO-206AA) package with a height of 0.230 inch and a lead spacing of 0.250 inch. It has a collector-emitter voltage rating of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. The operating and storage junction temperature range is -65 to +200°C. The device exhibits a forward current transfer ratio (hFE) of 40 to 175 at 1.0 mA collector current and 10 V collector-emitter voltage, with a collector-emitter saturation voltage of 0.4 V at 150 mA collector current and 15 mA base current. It meets the MIL-PRF-19500/291 military specification for high reliability applications.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
JANTX2N2906AL
Bipolar Transistors - BJT JANTX2N2906AL
Bipolar Transistors - BJT BJTs

Bipolar Transistors - BJT BJTs

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number JANTX2N2906AL
Product Name Bipolar Transistors - BJT
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