Microsemi Corp. Bipolar Transistors - BJT Jantx2N2906A

PNP silicon small signal transistor in TO-18 package, rated for 60 V collector-emitter voltage, 600 mA collector current, and 500 mW power dissipation at 25°C, with an operating junction temperature range of -65°C to +200°C, qualified to MIL-PRF-19500/291. The device has a forward current transfer ratio of 40 to 175 at 1 mA collector current and 40 to 120 at 150 mA, collector-emitter saturation voltage of 0.4 V at 150 mA collector and 15 mA base current, and turn-on and turn-off times of 45 μs and 300 μs respectively.