Microsemi Corp. Bipolar Transistors - BJT Jantx2N2906A/TR

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Bipolar Transistors - BJT BJTs
Description
Bipolar Transistors - BJT BJTs
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PNP small signal silicon transistor in a TO-18 package, qualified to MIL-PRF-19500/291, with a collector-emitter voltage rating of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. Operating and storage junction temperature ranges from -65°C to +200°C. The device meets MIL-STD-202 qualifications and is RoHS compliant. Package dimensions conform to TO-206AA with three leads and a metal case connected to the collector.

Datasheet Summary
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PNP small signal silicon transistor in a TO-18 package, qualified to MIL-PRF-19500/291, with a collector-emitter voltage rating of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. Operating and storage junction temperature ranges from -65°C to +200°C. The device meets MIL-STD-202 qualifications and is RoHS compliant. Package dimensions conform to TO-206AA with three leads and a metal case connected to the collector.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
Jantx2N2906A/TR
Bipolar Transistors - BJT Jantx2N2906A/TR
Bipolar Transistors - BJT BJTs

Bipolar Transistors - BJT BJTs

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number Jantx2N2906A/TR
Product Name Bipolar Transistors - BJT
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