Microsemi Corp. Bipolar Transistors - BJT Jantx2N2904AL/TR

The Jantx2N2904AL/TR is a PNP silicon switching transistor in a TO-39 package, qualified to JANTX level per MIL-PRF-19500/290 for high-reliability applications. It has a collector-emitter voltage rating of 60 V, a collector current rating of 600 mA, and a total power dissipation of 0.8 W at 25 °C. The thermal resistance from junction to case is 50 °C/W and from junction to ambient is 195 °C/W. The operating and storage junction temperature range is -65 to +200 °C. The device features a common-emitter static forward current transfer ratio ranging from 40 to 175 depending on collector current, a collector-emitter saturation voltage of 0.4 V at 150 mA collector current and 15 mA base current, and a base-emitter saturation voltage of 1.3 V under the same conditions. The case is hermetically sealed with a kovar base and nickel cap, and terminals are tin/lead plated.