Microsemi Corp. Bipolar Transistors - BJT Jantx2N2904A/TR

The Jantx2N2904A/TR is a PNP silicon switching transistor in a TO-39 (TO-205AD) hermetically sealed package, designed for high-reliability military applications. It has a collector-emitter voltage rating of 60 V, collector-base voltage of 60 V, emitter-base voltage of 5.0 V, and a maximum collector current of 600 mA. The device dissipates up to 300 mW at 25 °C ambient temperature with a thermal resistance junction-to-ambient of 195 °C/W and junction-to-case of 50 °C/W. Operating and storage junction temperatures range from -65 to +200 °C. It meets MIL-PRF-19500/290 qualification standards for JANTX level and is packaged with kovar leads and a nickel cap. The case is internally connected to the collector terminal.