Microsemi Corp. TRANSISTORS - RF Transistors (BJT) - JANTX2N2857 JANTX2N2857

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 142861-JANTX2N2857 Packaging: Bulk Mounting: Through Hole Gain: 12.5dB to 21dB @ 450MHz Frequency - Transition: 500MHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-72 Maximum Current Collector: 40mA VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Typical Gain (hFE) (Min): 30 @ 3mA, 1V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Quantity per package: 1
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 142861-JANTX2N2857 Packaging: Bulk Mounting: Through Hole Gain: 12.5dB to 21dB @ 450MHz Frequency - Transition: 500MHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-72 Maximum Current Collector: 40mA VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Typical Gain (hFE) (Min): 30 @ 3mA, 1V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Quantity per package: 1
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Suppliers

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Product
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TRANSISTORS - RF Transistors (BJT) - JANTX2N2857 - 142861-JANTX2N2857 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - JANTX2N2857
142861-JANTX2N2857
TRANSISTORS - RF Transistors (BJT) - JANTX2N2857 142861-JANTX2N2857
Manufacturer: Microsemi Corporation Win Source Part Number: 142861-JANTX2N2857 Packaging: Bulk Mounting: Through Hole Gain: 12.5dB to 21dB @ 450MHz Frequency - Transition: 500MHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-72 Maximum Current Collector: 40mA VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Typical Gain (hFE) (Min): 30 @ 3mA, 1V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 142861-JANTX2N2857
Packaging: Bulk
Mounting: Through Hole
Gain: 12.5dB to 21dB @ 450MHz
Frequency - Transition: 500MHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 200°C (TJ)
Case / Package: TO-72
Maximum Current Collector: 40mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 15V
Typical Gain (hFE) (Min): 30 @ 3mA, 1V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
Quantity per package: 1

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - JANTX2N2857 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
JANTX2N2857
Discrete Semiconductor Products - Transistors - Bipolar (BJT) JANTX2N2857
RF TRANS NPN 15V 500MHZ TO72

RF TRANS NPN 15V 500MHZ TO72

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors
Product Number 142861-JANTX2N2857 JANTX2N2857
Product Name TRANSISTORS - RF Transistors (BJT) - JANTX2N2857 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN
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