Microsemi Corp. Bipolar Transistors - BJT Jantx2N2605

The Jantx2N2605 is a PNP silicon low-power transistor in a TO-46 package, designed for general-purpose amplification and switching applications. It has a collector-base voltage rating of 70 Vdc, a collector-emitter voltage rating of 60 Vdc, and a maximum collector current of 30 mA. Power dissipation is rated at 400 mW at 25°C ambient temperature, with a thermal resistance junction-to-ambient of 275 °C/mW. The device features a forward current transfer ratio (hFE) between 100 and 400 at 10 mA collector current and 5 V collector-emitter voltage. The collector-emitter saturation voltage is 0.3 V maximum at 10 mA collector and 500 μA base current. Operating and storage junction temperatures range from -65°C to +200°C. The part is qualified to MIL-PRF-19500/354 standards. The case is metallized and the collector is electrically connected to the metal package.