Microsemi Corp. Bipolar Transistors - BJT Jantx2N2484UB/TR

NPN silicon low-power transistor in TO-18 case for high-reliability applications, qualified to MIL-PRF-19500/376 with JANTX quality level. Collector-emitter voltage is 60 Vdc, collector current is 50 mAdc, and total power dissipation is 360 mW at +25°C. Thermal resistance from ambient to case is 350°C/W. Current gain (hFE) ranges from 225 to 800 at 10 mA collector current and 5 V collector-emitter voltage. Collector-emitter saturation voltage is 0.3 V at 1 mA collector current and 100 μA base current. Operating and storage junction temperature ranges from -65°C to +200°C.