Microsemi Corp. Bipolar Transistors - BJT Jantx2N2484/TR

The Jantx2N2484/TR is an NPN silicon low-power transistor as part of the 2N2484 series qualified to MIL-PRF-19500/376, housed in a TO-18 (TO-206AA) package. It has a collector-emitter voltage rating of 60 Vdc, collector current of 50 mAdc, and power dissipation of 360 mW at +25°C. Operating and storage junction temperatures range from -65 to +200°C, with thermal resistance from ambient to case of 275 °C/W. Electrical characteristics include a minimum forward current transfer ratio of 200 at 10 μA collector current and 5 Vcollector-emitter voltage, and a collector-emitter saturation voltage of 0.3 V at 1 mA collector and 100 μA base current. The device meets MIL-PRF-19500/376 qualification standards and features collector-base cutoff current of 10 μAdc at 60 Vdc.