Microsemi Corp. Bipolar Transistors - BJT JANTX2N2369A/TR

NPN silicon transistor qualified per MIL-PRF-19500/317, available in TO-18 package, with a collector-emitter voltage rating of 15 Vdc, collector-base voltage of 40 Vdc, and emitter-base voltage of 4.5 Vdc. Total power dissipation is 0.36 W at +25°C, derating at 2.06 mW/°C above that temperature. Thermal resistance from ambient to case is 400 °C/W. Current gain (hFE) ranges from 20 to 120 across collector currents of 10 mA to 100 mA. Collector-emitter saturation voltage is 0.20 V at 10 mA collector and 1 mA base current. Turn-on and turn-off times are 12 μs and 18 μs respectively. Input and output capacitances are 5.0 pF and 4.0 pF at 100 kHz to 1.0 MHz. Operating and storage junction temperature range is -65°C to +200°C.