Microsemi Corp. Bipolar Transistors - BJT Jantx2N2222A

NPN silicon switching transistor in a TO-18 package, rated for a collector-emitter voltage of 50 Vdc, collector current of 800 mAdc, and total power dissipation of 0.5 W at 25°C. Operating and storage junction temperature range is -65 to +200°C. Thermal resistance junction-to-ambient is 325 °C/W for the standard package variant. Electrically characterized with a minimum forward-current transfer ratio (hFE) of 100 at 10 mA collector current and 10 V collector-emitter voltage, and a collector-emitter saturation voltage of 0.3 V at 150 mA collector current and 15 mA base current. Qualified to MIL-PRF-19500/255. Lead configuration follows the TO-18 pinout: emitter, base, collector.