Microsemi Corp. Bipolar Transistors - BJT Jantx2N2221AUB

Description
Bipolar Transistors - BJT BJTs
Description
Bipolar Transistors - BJT BJTs
Datasheet
Datasheet Summary
Powered by GS/AI

NPN silicon switching transistor in TO-18 (TO-206AA) package with a 50 V collector-emitter voltage rating, 800 mA collector current capability, and 0.5 W power dissipation at 25°C. The device is qualified per MIL-PRF-19500/255 and features a ceramic lid for JANS-level reliability, with an operating and storage junction temperature range of -65°C to +200°C.

Datasheet Summary
Powered by GS/AI

NPN silicon switching transistor in TO-18 (TO-206AA) package with a 50 V collector-emitter voltage rating, 800 mA collector current capability, and 0.5 W power dissipation at 25°C. The device is qualified per MIL-PRF-19500/255 and features a ceramic lid for JANS-level reliability, with an operating and storage junction temperature range of -65°C to +200°C.

Suppliers

Company
Product
Description
Supplier Links
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
Jantx2N2221AUB
Bipolar Transistors - BJT Jantx2N2221AUB
Bipolar Transistors - BJT BJTs

Bipolar Transistors - BJT BJTs

Buy Now Datasheet

Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number Jantx2N2221AUB
Product Name Bipolar Transistors - BJT
Unlock Full Specs
to access all available technical data