NPN silicon switching transistor in a 4-pin surface-mount package with a ceramic lid, rated for a collector-emitter voltage of 50 Vdc, collector current of 800 mAdc, and power dissipation of 0.5 W at 25°C. The junction temperature range is -65 to +200°C. Thermal resistance junction-to-ambient is 325 °C/W. The device meets MIL-PRF-19500/255 qualification standards. Collector is internally connected to the case. Pinout: pin 1 = base, pin 2 = emitter, pin 3 = collector, pin 4 = shield connected to the lid.
Bipolar Transistors - BJT BJTs
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | Jantx2N2221AUB/TR |
| Product Name | Bipolar Transistors - BJT |
