Microsemi Corp. Bipolar Transistors - BJT Jantx2N2221AUA

NPN silicon switching transistor for high-reliability applications, available in a 4-pin surface-mount package with dimensions of 0.128 inches in length and 0.108 inches in width. It has a collector-emitter voltage rating of 50 Vdc, a collector current of 800 mAdc, and a total power dissipation of 0.5 W at 25°C. Thermal resistance junction-to-ambient is 210 °C/W. Electrical characteristics include a minimum forward-current transfer ratio (hFE) of 30 at 1 mA collector current and 40 at 10 mA collector current, with collector-emitter saturation voltage of 0.3 V at 150 mA collector and 15 mA base current. The device is qualified per MIL-PRF-19500/255 and meets military performance standards.