Microsemi Corp. Bipolar Transistors - BJT Jantx2N2221AUA/TR

The Jantx2N2221AUA/TR is a silicon NPN switching transistor in a 4-pin surface mount package with a ceramic lid, designed for high-reliability applications. It has a collector-emitter voltage rating of 50 Vdc, a collector current of 800 mAdc, and a total power dissipation of 0.5 W at +25°C. The thermal resistance junction-to-ambient is 210 °C/W. The device meets MIL-PRF-19500/255 qualification standards. Forward current transfer ratio ranges from 30 to 150 depending on bias conditions, with a collector-emitter saturation voltage of 0.3 Vdc at 150 mA collector current and 15 mA base current. Switching times are 35 μs turn-on and 300 μs turn-off. The collector is internally connected to the case, and the device operates from -65°C to +200°C.