NPN silicon switching transistor in TO-18 package, rated for a collector-emitter voltage of 50 Vdc and a collector current of 800 mAdc, with a total power dissipation of 0.5 W at +25°C. The device has a junction temperature range of -65 to +200°C, a thermal resistance of 325 °C/W, and meets MIL-PRF-19500/255 qualification. Switching times are 35 µs turn-on and 300 µs turn-off. The package has a pin configuration of emitter, base, collector with lead dimensions specified to MIL standards. The part is available in a tape and reel format as indicated by the /TR suffix.
Bipolar Transistors - BJT BJTs
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | Jantx2N2221A/TR |
| Product Name | Bipolar Transistors - BJT |
