NPN silicon switching transistor for signal amplification and switching applications, qualified per MIL-PRF-19500/251 at JANTX level, housed in a TO-5 package with dimensions conforming to the TO-39 form factor. Collector-emitter voltage rating is 50 Vdc, collector-base voltage is 75 Vdc, emitter-base voltage is 6.0 Vdc, and maximum collector current is 800 mA. Total power dissipation is 3.0 W at +25°C. Thermal resistance junction-to-case is 59 °C/W. Operating and storage junction temperature range is -55 to +200 °C. Forward current transfer ratio (hFE) ranges from 75 to 325 at 1.0 mA collector current and 10 V collector-emitter voltage. Collector-emitter saturation voltage is 0.3 V at 150 mA collector current and 15 mA base current. Turn-on time is 35 μs, and turn-off time is 300 μs under specified conditions.
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN Product overview: JANTX2N2219AL from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.8A, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 0.8A, 50V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JANTX2N2219AL can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-JANTX2N2219AL |
| Product Name | 0.8A 50V Bipolar Transistor |
| IC(max) | 800 milliamps |
