Microsemi Corp. Bipolar Transistors - BJT Jantx2N2218AL/TR

The Jantx2N2218AL/TR is an NPN silicon switching transistor in a TO-39 package, designed for high-reliability switching applications. It has a collector-emitter voltage rating of 50 Vdc, a collector-base voltage of 75 Vdc, and a maximum collector current of 800 mA. The device dissipates up to 3.0 W at +25°C, with a junction-to-case thermal resistance of 59 °C/W and an operating junction temperature range of -55 to +200°C. The transistor exhibits a minimum forward current transfer ratio (hFE) of 30 at IC = 1.0 mA and VCE = 10 V, and a collector-emitter saturation voltage of 0.3 V at IC = 150 mA and IB = 15 mA. It is qualified per MIL-PRF-19500/251 and meets JANTX level requirements.