Microsemi Corp. Bipolar Transistors - BJT Jantx2N2218A/TR

NPN silicon switching transistor for use in switching applications, available in TO-39 package with dimensions of 7.75 to 8.51 mm in diameter and 8.51 to 9.40 mm in height. Collector-emitter voltage rating is 50 Vdc, collector-base voltage is 75 Vdc, and emitter-base voltage is 6.0 Vdc. Maximum collector current is 800 mA, with total power dissipation of 3.0 W at +25°C. Thermal resistance junction-to-case is 59 °C/W. Operating and storage junction temperature range is -55 to +200 °C. Forward current transfer ratio ranges from 30 to 150 at collector current of 1 to 150 mA. Collector-emitter saturation voltage is 0.3 Vdc at 150 mA collector and 15 mA base current. Qualified per MIL-PRF-19500/251 and designated JANTX level.