Microsemi Corp. Bipolar Transistors - BJT Jantx2N2060L/TR

Dual NPN silicon transistor in a TO-78 package, qualified per MIL-PRF-19500/270 as JANTX grade. Maximum collector-emitter voltage is 60 Vdc, collector-base voltage is 100 Vdc, and emitter-base voltage is 7.0 Vdc. Collector current is rated at 500 mAdc. Power dissipation is 600 mW at +25°C for both sections, derating at 3.48 mW/°C above that temperature. Operating and storage junction temperature range is -65 to +200°C. Forward-current transfer ratio ranges from 30 to 90 at collector current of 100 mA and collector-emitter voltage of 5.0 Vdc. Collector-emitter saturation voltage is 0.3 Vdc at collector current of 50 mA and base current of 5.0 mA.