Microsemi Corp. Bipolar Transistors - BJT Jantx2N2060/TR

The Jantx2N2060/TR is a unitized dual NPN silicon transistor in a TO-78 package, designed for general-purpose switching and amplification applications. It has a collector-emitter voltage rating of 60 Vdc, a collector current rating of 500 mAdc, and a total power dissipation of 600 mW at +25°C for both sections. The device operates over a junction and storage temperature range of -65°C to +200°C. Electrical characteristics include a forward-current transfer ratio (hFE) ranging from 25 to 150 depending on bias conditions, a collector-emitter saturation voltage of 0.3 Vdc, and a base-emitter saturation voltage of 0.9 Vdc. The transistor meets MIL-PRF-19500/270 qualification standards.