Microsemi Corp. FETs - Single - JANSR2N7389 JANSR2N7389

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1191408-JANSR2N7389 Packaging: Tray Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-205AF (TO-39) Drive Voltage (Max Rds On, Min Rds On): 12V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-205AF Metal Can Power Dissipation (Maximum): 25W Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: Not Applicable Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 6.5A Rds On (Maximum) at Id, Vgs: 350mOhm at 6.5A, 12V Gate Source Voltage(th) (Maximum) at Id: 4V at 1mA Gate Charge (Qg) (Maximum) at Vgs: 45nC at 12V Gate Source Voltage (Maximum): ±20V
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1191408-JANSR2N7389 Packaging: Tray Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-205AF (TO-39) Drive Voltage (Max Rds On, Min Rds On): 12V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-205AF Metal Can Power Dissipation (Maximum): 25W Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: Not Applicable Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 6.5A Rds On (Maximum) at Id, Vgs: 350mOhm at 6.5A, 12V Gate Source Voltage(th) (Maximum) at Id: 4V at 1mA Gate Charge (Qg) (Maximum) at Vgs: 45nC at 12V Gate Source Voltage (Maximum): ±20V
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Suppliers

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FETs - Single - JANSR2N7389 - 1191408-JANSR2N7389 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - JANSR2N7389
1191408-JANSR2N7389
FETs - Single - JANSR2N7389 1191408-JANSR2N7389
Manufacturer: Microsemi Corporation Win Source Part Number: 1191408-JANSR2N7389 Packaging: Tray Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-205AF (TO-39) Drive Voltage (Max Rds On, Min Rds On): 12V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-205AF Metal Can Power Dissipation (Maximum): 25W Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: Not Applicable Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 6.5A Rds On (Maximum) at Id, Vgs: 350mOhm at 6.5A, 12V Gate Source Voltage(th) (Maximum) at Id: 4V at 1mA Gate Charge (Qg) (Maximum) at Vgs: 45nC at 12V Gate Source Voltage (Maximum): ±20V

Manufacturer: Microsemi Corporation
Win Source Part Number: 1191408-JANSR2N7389
Packaging: Tray
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-205AF (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 12V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-205AF Metal Can
Power Dissipation (Maximum): 25W
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: Not Applicable
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 6.5A
Rds On (Maximum) at Id, Vgs: 350mOhm at 6.5A, 12V
Gate Source Voltage(th) (Maximum) at Id: 4V at 1mA
Gate Charge (Qg) (Maximum) at Vgs: 45nC at 12V
Gate Source Voltage (Maximum): ±20V

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Sheung Wan, Hong Kong
MOSFET

MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - JANSR2N7389 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
JANSR2N7389
Discrete Semiconductor Products - Transistors - FETs, MOSFETs JANSR2N7389
MOSFET P-CH 100V 6.5A TO205AF

MOSFET P-CH 100V 6.5A TO205AF

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1191408-JANSR2N7389 JANSR2N7389 JANSR2N7389
Product Name FETs - Single - JANSR2N7389 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel
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