Microsemi Corp. Bipolar Transistors - BJT JANSR2N5153/TR

PNP power silicon transistor for high-current switching applications, housed in a TO-39 (TO-205AD) package with dimensions of 7.75-8.51 mm in diameter and 6.35 mm in height. Rated for a collector-emitter voltage of 80 Vdc, collector current of 2.0 Adc, and total power dissipation of 10 W at +25°C. Junction temperature range extends from -65°C to +200°C. Thermal resistance junction-to-case is 1.75 °C/W. Qualified to MIL-PRF-19500/545 with JANS reliability level. Forward current transfer ratio ranges from 50 to 200 at I_C = 2.5 A and V_CE = 5 V. Collector-emitter saturation voltage is 0.75 V at I_C = 2.5 A and I_B = 250 mA. Turn-on and turn-off times are 0.5 μs and 1.5 μs respectively under specified switching conditions.