Microsemi Corp. Bipolar Transistors - BJT JANSR2N3700UB

The JANSR2N3700UB is a radiation-hardened NPN silicon transistor in a ceramic surface mount package, designed for high-reliability military applications. It has a collector-emitter voltage rating of 80 V, collector current of 1.0 A, and total power dissipation of 0.5 W at 25 °C, derating linearly at 6.6 mW/°C above that temperature. The thermal impedance from junction to ambient is 325 °C/W, and junction to case is 90 °C/W. The device meets MIL-PRF-19500/391 qualification standards and is rated for 100 krad(Si) total ionizing dose. Its package measures 2.74 mm wide by 3.25 mm long, with a weight under 0.04 grams. The terminals are gold-plated over nickel. The part is qualified per JANSR reliability level and is the surface mount equivalent to the JEDEC 2N3700.