The JANSR2N3700 is a military-grade, hermetically sealed NPN silicon transistor in a TO-18 package, designed for high-reliability applications. It has a collector-emitter voltage rating of 80 V, a maximum collector current of 1.0 A, and a total power dissipation of 0.5 W at 25 °C ambient temperature. The device meets MIL-PRF-19500/391 qualifications for JANS levels, with a junction and storage temperature range of -65 to +200 °C and thermal impedance from junction to ambient of 325 °C/W. The package is nickel-plated kovar with gold-plated terminals and weighs approximately 0.3 grams. It is RoHS compliant in commercial versions only.
Bipolar Transistors - BJT 80V 1A 500mW RH Small-Signal BJT THT Product overview: JANSR2N3700 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 1A, 500mW. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 1A, 500mW, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JANSR2N3700 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-JANSR2N3700 |
| Product Name | 80V 1A 500mW Bipolar Transistor |
| Package Type | Bulk |
