Microsemi Corp. MOSFET JANSF2N7269

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MOSFET RH Mosfet
Description
MOSFET RH Mosfet
Datasheet
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The JANSF2N7269 is a radiation-hardened n-channel MOSFET designed for high-reliability aerospace and military applications, housed in a TO-254AA package with operating and storage temperatures from -55°C to +150°C. It has a drain-source voltage rating of 200 Vdc, continuous drain current of 16.0 Adc at +100°C, and a static drain-source on-state resistance of 0.100 Ω at 12 V gate voltage and 16.0 A drain current. The device is qualified to MIL-PRF-19500/603 and has a radiation tolerance of 300 krad(Si) total ionizing dose. Gate-source threshold voltage ranges from 1.25 V to 4.5 V post-irradiation under MSF conditions.

Datasheet Summary
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The JANSF2N7269 is a radiation-hardened n-channel MOSFET designed for high-reliability aerospace and military applications, housed in a TO-254AA package with operating and storage temperatures from -55°C to +150°C. It has a drain-source voltage rating of 200 Vdc, continuous drain current of 16.0 Adc at +100°C, and a static drain-source on-state resistance of 0.100 Ω at 12 V gate voltage and 16.0 A drain current. The device is qualified to MIL-PRF-19500/603 and has a radiation tolerance of 300 krad(Si) total ionizing dose. Gate-source threshold voltage ranges from 1.25 V to 4.5 V post-irradiation under MSF conditions.

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MOSFET RH Mosfet

MOSFET RH Mosfet

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number JANSF2N7269
Product Name MOSFET
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