Microsemi Corp. Bipolar Transistors - BJT JANS2N918/TR

NPN silicon transistor in TO-72 package for low-power applications, qualified to MIL-PRF-19500/301 with a collector-emitter voltage rating of 15 Vdc, collector current of 50 mAdc, and power dissipation of 200 mW at 25°C. Operating and storage junction temperature range is -65°C to +200°C. The device has a forward current transfer ratio ranging from 10 to 200, collector-emitter saturation voltage of 0.4 Vdc, and base-emitter saturation voltage of 1.0 Vdc. Input and output capacitances are 2.0 pF and 1.7 pF respectively. The transistor is designed for oscillator and amplifier use with a noise figure of 6.0 dB and small-signal power gain of 15 dB at specified conditions.