Microsemi Corp. Bipolar Transistors - BJT Jans2N6987/TR

Quad PNP silicon switching transistor array qualified to MIL-PRF-19500/558 JANS standard, housed in a 20-pin leadless package. Each transistor supports a maximum collector-emitter voltage of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 1.0 W at +25°C, derated linearly at 8.57 mW/°C above that temperature. Operating and storage junction temperature ranges from -65°C to +200°C. Forward current transfer ratio (hFE) ranges from 50 to 300 depending on collector current. Collector-emitter saturation voltage is 1.6 V at 500 mA collector and 50 mA base current. Input and output capacitances are 30 pF and 8.0 pF respectively under specified conditions.