The JANS2N3810U/TR is a PNP silicon dual transistor designed for signal amplification and switching applications. It is packaged in a TO-78 case with a maximum collector-emitter voltage of 60 Vdc and a collector current rating of 50 mAdc. The device supports a total power dissipation of 0.6 W at 25°C and operates across a junction temperature range of -65°C to +200°C. It is qualified per MIL-PRF-19500/336 for JANTXV grade. The forward current transfer ratio (hFE) ranges from 150 to 450 at IC = 10 mA and VCE = 5 V, with a collector-emitter saturation voltage of 0.2 V at IC = 100 mA and IB = 10 mA. Input and output capacitances are 8.0 pF and 5.0 pF respectively, and the noise figure is specified at 3.0 dB at 1 kHz under test conditions.
Bipolar Transistors - BJT 60V 50mA 350mW Dual Small-Signal BJT SQ SMT TR Product overview: JANS2N3810U/TR from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 60V, 50mA, 350mW. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 60V, 50mA, 350mW, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JANS2N3810U/TR can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-JANS2N3810U/TR |
| Product Name | Dual 60V 50mA 350mW Bipolar Transistor |
| Package Type | Bulk |
