The JANS2N3700UB is a military-qualified NPN silicon bipolar transistor in a ceramic UB surface mount package, designed for high-reliability applications. It has a collector-emitter voltage rating of 80 V, a collector current rating of 1.0 A, and a total power dissipation of 0.5 W at 25 °C, derating at 6.6 mW/°C above that temperature. The junction and storage temperature range is -65 °C to +200 °C, with a thermal impedance of 325 °C/W junction-to-ambient and 90 °C/W junction-to-solder pad. The device meets MIL-PRF-19500/391 qualification standards and is available in RoHS-compliant versions. The package dimensions are 0.115 to 0.128 inches in length, 0.085 to 0.108 inches in width, and 0.046 to 0.056 inches in height, with a weight less than 0.04 grams.
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC, UB-3 Product overview: JANS2N3700UB from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1A, 80V. Search-friendly keywords include transistor, BJT, switching, amplification, 1A, 80V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JANS2N3700UB can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-JANS2N3700UB |
| Product Name | 1A 80V Bipolar Transistor |
| Polarity | NPN |
