JANS2N3637UB is a PNP silicon switching transistor in a surface-mount ceramic package, rated for a collector-emitter voltage of 175 Vdc and a collector current of 1.0 Adc. It has a total power dissipation of 1.5 W at +25°C and operates over a junction temperature range of -65°C to +200°C. The device meets MIL-PRF-19500/357 qualification standards. The package dimensions conform to the UB variant specification with a lead length between 12.70 mm and 19.05 mm minimum and maximum, respectively.
Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3 Product overview: JANS2N3637UB from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1A, 175V. Search-friendly keywords include transistor, BJT, switching, amplification, 1A, 175V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JANS2N3637UB can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-JANS2N3637UB |
| Product Name | 1A 175V Bipolar Transistor |
| IC(max) | 1000 milliamps |
