The JANS2N3637UB/TR is a PNP silicon switching transistor in a surface-mount TO-39 package, rated for a collector-emitter voltage of 175 Vdc and a maximum collector current of 1.0 Adc. It has a total power dissipation of 1.5 W at +25°C and an operating junction temperature range of -65°C to +200°C. The device meets MIL-PRF-19500/357 qualification and is designed for high-reliability applications. Its forward current transfer ratio ranges from 60 to 300 at 50 mA collector current and 10 V collector-emitter voltage, with a collector-emitter saturation voltage of up to 0.6 V under specified conditions. The output capacitance is 10 pF at 20 Vdc and zero collector current, and the input capacitance is 75 pF at 1.0 Vdc and zero collector current.
Bipolar Transistors - BJT 175 V Small-Signal BJT Product overview: JANS2N3637UB/TR from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 175 V. Search-friendly keywords include transistor, BJT, switching, amplification, 175 V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JANS2N3637UB/TR
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-JANS2N3637UB/TR |
| Product Name | 175 V Bipolar Transistor |
| Polarity | PNP |
