Microsemi Corp. Bipolar Transistors - BJT JANS2N3637/TR

JANS2N3637/TR is a PNP silicon switching transistor qualified to MIL-PRF-19500/357 and JANS level, available in a TO-5 package with a lead length of 1.500 to 1.750 inches. It has a collector-emitter voltage rating of 175 Vdc, a collector current of 1.0 Adc, and a total power dissipation of 5.0 W at +25°C. The operating and storage junction temperature range is -65 to +200°C. Electrical characteristics include a forward current transfer ratio (hFE) of 60 to 300 at 50 mA collector current, a collector-emitter saturation voltage of 0.6 V at 50 mA collector and 5 mA base current, and an input capacitance of 75 pF. Device parameters meet MIL-STD-202 and are consistent with the 2N3637 series variants.