Microsemi Corp. Bipolar Transistors - BJT JANS2N3501/TR

The JANS2N3501/TR is a high-reliability NPN silicon transistor from the 2N3498 through 2N3501 series, qualified to JANS level per MIL-PRF-19500/366 for military applications. It is housed in a TO-39 (TO-205AD) hermetically sealed package with a kovar base and nickel cap, weighing approximately 1.064 grams. The device has a collector-emitter voltage rating of 150 V, a collector current rating of 300 mA, and a maximum junction temperature range of -65 to +200 °C. Thermal resistance is 30 °C/W junction-to-case and 175 °C/W junction-to-ambient. Electrical characteristics include a minimum hFE of 20 at 300 mA collector current and 10 V collector-emitter voltage, with a collector-emitter saturation voltage of 0.6 V at 300 mA collector current and 30 mA base current. The part is fully compliant with military qualification standards but does not support RoHS compliance at the JANS level.