Microsemi Corp. Bipolar Transistors - BJT JANS2N3019/TR

The JANS2N3019/TR is a military-qualified, low-power NPN silicon transistor in a TO-5 package, designed for high-reliability applications. It has a collector-emitter voltage rating of 80 V, a collector-base voltage of 140 V, and a collector current of 1.0 A. The device dissipates 0.8 W at 25 °C ambient temperature with a thermal resistance junction-to-ambient of 195 °C/W. The junction and storage temperature range is -65 to +200 °C. It is hermetically sealed with a kovar base and nickel cap, and complies with MIL-PRF-19500/391 qualification standards. The part is RoHS compliant by design, with gold-plated terminals and a weight of approximately 1.064 grams.