Radiation-hardened NPN silicon dual transistor in a U-package, qualified to JANSU level for up to 100 krad(Si) total ionizing dose at low dose rate. Maximum collector-emitter voltage is 60 Vdc, collector current is 30 mAdc, and power dissipation is 350 mW for both sections at 25 °C. Operating and storage junction temperature range is from -65 °C to +200 °C.
Trans GP BJT NPN 60V 0.03A 6-Pin Case U Product overview: JANS2N2920U from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.03A. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 0.03A, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JANS2N2920U can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-JANS2N2920U |
| Product Name | 60V 0.03A Bipolar Transistor |
| IC(max) | 30 milliamps |
