Microsemi Corp. Bipolar Transistors - BJT JANS2N2907A

The JANS2N2907A is a PNP small signal silicon transistor qualified to MIL-PRF-19500/291 for high-reliability applications, housed in a TO-18 metal case with a maximum height of 5.84 mm, base diameter of 4.95 mm, and lead spacing defined by a 1.27 mm lead length. It has a collector-emitter voltage rating of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. Operating and storage junction temperature ranges from -65°C to +200°C. Electrical characteristics include a forward current transfer ratio (hFE) of 100 to 300 at 150 mA collector current and 10 V collector-emitter voltage, collector-emitter saturation voltage of 0.4 V at 150 mA collector and 15 mA base current, and base-emitter saturation voltage of 0.6 to 1.3 V under the same conditions. The device meets MIL-PRF-19500/291 military specifications.