Microsemi Corp. Bipolar Transistors - BJT JANS2N2905A/TR

The JANS2N2905A/TR is a PNP silicon switching transistor in a TO-39 (TO-205AD) package, hermetically sealed with a kovar base and nickel cap, weighing approximately 1.064 grams. It has a collector-emitter voltage rating of 60 V, a collector-base voltage rating of 60 V, and an emitter-base voltage of 5.0 V, with a maximum collector current of 600 mA and total power dissipation of 0.8 W at 25 °C ambient temperature. The thermal resistance from junction to case is 50 °C/W and junction to ambient is 195 °C/W. Operating and storage junction temperatures range from -65 °C to +200 °C. The device is qualified to the JANS level per MIL-PRF-19500/290 for high-reliability applications.