JANS2N2484UB is a radiation-hardened NPN silicon low power transistor in a ceramic surface-mount package with a ceramic lid, rated for a collector-emitter voltage of 60 Vdc and a continuous collector current of 50 mAdc. It operates over a junction temperature range of -65 to +200 °C and dissipates up to 360 mW at 25 °C. The device meets JANS quality level requirements for 100 krad (Si) radiation tolerance at a low dose rate of 10 mRad/s. Pin configuration is defined by the surface-mount layout with terminal assignments: pad 1 as base, pad 2 as emitter, pad 3 as collector, and pad 4 connected to the ceramic lid. Package dimensions follow the specified surface-mount profile for 2N2484UB variants with a maximum thickness of 0.075 inch (1.91 mm) with a window lid.
Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3 Product overview: JANS2N2484UB from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.05A, 60V. Search-friendly keywords include transistor, BJT, switching, amplification, 0.05A, 60V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JANS2N2484UB can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-JANS2N2484UB |
| Product Name | 0.05A 60V Bipolar Transistor |
