Microsemi Corp. Bipolar Transistors - BJT Jans2N2219A/TR

NPN silicon switching transistor designed for general-purpose applications, available in TO-39 package with physical dimensions of 7.75 to 8.51 mm in diameter and 8.51 to 9.40 mm in height. The JANS2N2219A/TR variant has a collector-emitter voltage rating of 50 Vdc, collector-base voltage of 75 Vdc, and collector current of 800 mA. Maximum power dissipation is 3.0 W at +25°C with thermal resistance from junction-to-case of 59 °C/W. Operating and storage junction temperature range is -55 to +200 °C. Minimum current gain (hFE) is 100 at 10 mA collector current and 30 at 500 mA. Collector-emitter saturation voltage is 1.0 V at 500 mA collector current and 50 mA base current. Device is qualified per MIL-PRF-19500/251 and features an internal connection between collector and case.