Microsemi Corp. Bipolar Transistors - BJT Jan2N7369

The Jan2N7369 is a PNP high-power silicon transistor designed for switching and amplification applications, qualified per MIL-PRF-19500/621 and available in JAN, JANTX, and JANTXV grades. It is mounted in a TO-254 package with a maximum power dissipation of 115 W at 25°C and a junction-to-case thermal resistance of 1.5°C/W. Rated for a collector-emitter voltage of 80 Vdc, collector current of 10 Adc, and base current of 4.0 Adc, it operates with a junction temperature range of -65°C to +200°C. Electrical characteristics include a forward-current transfer ratio of 30 to 175, collector-emitter saturation voltage of 1.0 Vdc at 5.0 A collector current, and base-emitter saturation voltage of 1.5 Vdc. Output capacitance is 500 pF at 10 Vdc and 1 MHz. The device meets MIL-STD-202 for reliability testing.