Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N7225U JAN2N7225U

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 141234-JAN2N7225U Packaging: Bulk Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 4W (Ta), 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-267AB Dimension: TO-267AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 27.4A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 115nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 105 mOhm @ 27.4A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited Quantity per package: 1
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 141234-JAN2N7225U Packaging: Bulk Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 4W (Ta), 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-267AB Dimension: TO-267AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 27.4A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 115nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 105 mOhm @ 27.4A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited Quantity per package: 1
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N7225U - 141234-JAN2N7225U - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N7225U
141234-JAN2N7225U
TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N7225U 141234-JAN2N7225U
Manufacturer: Microsemi Corporation Win Source Part Number: 141234-JAN2N7225U Packaging: Bulk Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 4W (Ta), 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-267AB Dimension: TO-267AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 27.4A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 115nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 105 mOhm @ 27.4A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 141234-JAN2N7225U
Packaging: Bulk
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-267AB
Dimension: TO-267AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 27.4A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 115nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 105 mOhm @ 27.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 141234-JAN2N7225U
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N7225U
Polarity N-Channel; N-Channel
V(BR)DSS 200 volts
PD 4000 to 150000 milliwatts
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