Microsemi Corp. MOSFET Jan2N6990

The Jan2N6990 is a quad NPN silicon switching transistor in a 14-pin flat pack package, rated for a collector-emitter voltage of 50 Vdc, a collector-base voltage of 75 Vdc, and a collector current of 800 mAdc. Total power dissipation is 0.4 W at +25°C, derating at 2.286 mW/°C above that temperature. Operating and storage junction temperatures range from -65°C to +200°C. It meets MIL-PRF-19500/559 qualification. Forward current transfer ratio ranges from 30 to 300 depending on collector current, with collector-emitter saturation voltage up to 1.0 Vdc at 500 mA collector and 50 mA base current. Base-emitter saturation voltage reaches 2.0 Vdc under same conditions. Output capacitance is 8.0 pF and input capacitance is 25 pF at specified bias conditions.