Microsemi Corp. Bipolar Transistors - BJT Jan2N6990/TR

Quad NPN silicon switching transistors in a 20-pin leadless package, designed for high-reliability switching applications. Each transistor has a collector-emitter voltage rating of 50 Vdc, collector-base voltage of 75 Vdc, and collector current of 800 mAdc. Total power dissipation for the 2N6990 variant is 0.4 W at +25°C, derating linearly at 2.286 mW/°C above that temperature. Operating and storage junction temperature ranges from -65°C to +200°C. Devices are qualified to MIL-PRF-19500/559. Input capacitance is 25 pF, output capacitance is 8.0 pF, and forward current transfer ratio ranges from 30 to 300 depending on collector current. Collector-emitter saturation voltage is up to 1.0 Vdc at 500 mA collector and 50 mA base current.