Microsemi Corp. MOSFET Jan2N6989

The Jan2N6989 is a quad NPN silicon switching transistor in a 20-pin leadless package, designed for high-reliability switching applications. It shares a maximum collector-emitter voltage of 50 Vdc, collector current of 800 mAdc, and total power dissipation of 1.5 W at 25°C. The operating and storage junction temperature range is -65°C to +200°C. It meets MIL-PRF-19500/559 qualification standards. Forward current transfer ratio ranges from 30 to 325 depending on collector current, with collector-emitter saturation voltage up to 1.0 Vdc at 500 mA collector current. Input and output capacitances are 25 pF and 8.0 pF respectively at specified conditions.