Microsemi Corp. Bipolar Transistors - BJT Jan2N6989/TR

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Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT
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Quad NPN silicon switching transistor array in a 20-pin leadless package, rated for 50 V collector-emitter voltage, 800 mA collector current, and 1.5 W total power dissipation at 25°C, with junction temperature range from -65°C to +200°C. Devices meet MIL-PRF-19500/559 qualification standards.

Datasheet Summary
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Quad NPN silicon switching transistor array in a 20-pin leadless package, rated for 50 V collector-emitter voltage, 800 mA collector current, and 1.5 W total power dissipation at 25°C, with junction temperature range from -65°C to +200°C. Devices meet MIL-PRF-19500/559 qualification standards.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
Jan2N6989/TR
Bipolar Transistors - BJT Jan2N6989/TR
Bipolar Transistors - BJT

Bipolar Transistors - BJT

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number Jan2N6989/TR
Product Name Bipolar Transistors - BJT
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