Microsemi Corp. Bipolar Transistors - BJT Jan2N6988/TR

Quad PNP silicon switching transistors in a 14-pin flat pack, rated for collector-emitter and collector-base voltages up to 60 Vdc and collector current up to 600 mAdc, with total power dissipation of 0.4 W at +25°C derated linearly at 2.286 mW/°C above that temperature. Operating and storage junction temperature range is -65°C to +200°C. The device is qualified per MIL-PRF-19500/558 as JAN grade. Forward-current transfer ratio ranges from 50 to 300 depending on collector current, with collector-emitter saturation voltage up to 1.6 Vdc at 500 mA collector current and 50 mA base current.